Browse Topic: Cadmium
This SAE Aerospace Standard (AS) establishes the requirements for 24° cone flareless fluid connection fittings and nuts and bite type flareless sleeves for use in aircraft fluid systems at an operating pressure of 5000 psi for the fittings and nuts and 3000 psi for the bite type sleeves.
This specification covers the engineering requirements for cadmium deposited on ferrous and nonferrous metals using a low hydrogen embrittlement (LHE) electroplating process.
This specification covers the requirements for vacuum deposited cadmium.
14-day material test to determine the cyclic effects of runway deicing compounds on cadmium plated parts.
This SAE Aerospace Information Report (AIR) is intended to document and provide access to information obtained by an industry survey. It summarizes and documents data regarding possible alternatives to the use of cadmium plating on general connectors and connector accessories typically used in aerospace and military defense electrical interconnect systems.
It is both an exciting and a difficult time for the aerospace industry. While the sector is at its most buoyant with demand soaring in the commercial market, this is placing a strain on the manufacturing supply chain, and putting the MRO (maintenance, repair and overhaul) market under pressure to keep aircraft in operation for as long as possible. In addition, OEMs and MRO businesses are being forced to consider potential ever-evolving legislation, particularly regarding the use of various chemicals used in the plating process, most notably the use of cadmium. This toxic metal has long been the topic of debate in the industry, with companies facing the threat of a European ban on cadmium being extended to the global aerospace industry if studies into possible alternatives prove fruitful.
14-day material test to determine the cyclic effects of runway deicing compounds on cadmium plated parts.
A University of Chicago research team has created a new solder for semiconductors. After being heated to several hundred degrees Celsius, the compounds of cadmium, lead, and bismuth can be applied as a liquid or paste to join two pieces of a semiconductor.
For certain semiconductors with important applications, the existing bulk crystal growth technique from the melt usually results in poor-quality multi-crystalline ingots that cause the typically low yield of the commercial growth process. The low-quality, multi-grained crystal growth is mainly caused by the large supercool of the melt, which prohibits the ideal growth condition that a small, single-crystal nucleus forms at the very tip and grows into a large single crystal. For instance, semi-insulating cadmium zinc telluride (CdZnTe) crystal is a highly promising material for room-temperature x-ray and gamma ray detectors. However, the major hurdle in using the CdZnTe crystals is its cost. The ability to pack many data acquisition channels (hundreds) with the stopping power for high-energy radiation requires large single crystals of CdZnTe.
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