Lattice-Matched Semiconductor Layers on Single Crystalline Sapphire Substrate
TBMG-TB-005925
11/5/2009
- Content
{ntb_intro_text}
SiGe is an
important semiconductor alloy for high-speed field effect
transistors (FETs), high-temperature thermoelectric devices,
photovoltaic solar cells, and photon detectors. The growth of SiGe
layer is difficult because SiGe alloys have different lattice
constants from those of the common Si wafers, which leads to a high
density of defects, including dislocations, micro-twins, cracks,
and delaminations.{/ntb_intro_text}