Thermal Management Solutions to Advanced Integrated and Discrete Bipolar Junction (BJT) Device Structures

2004-01-2572

07/19/2004

Event
International Conference On Environmental Systems
Authors Abstract
Content
The bipolar junction transistor (BJT) generates heat that can lead to thermal runaway. BJT temperature increases can affect how well this device performs. Moreover, integrated circuits (IC) consisting of large numbers of BJTs can have an adverse effect on how the device performs in aggregate. This paper discusses the BJT functionality and causes of heat generation and proposes potential solutions to this thermal problem.
Meta TagsDetails
DOI
https://doi.org/10.4271/2004-01-2572
Pages
12
Citation
Ramsey, J., Jones, K., and Mitra, A., "Thermal Management Solutions to Advanced Integrated and Discrete Bipolar Junction (BJT) Device Structures," SAE Technical Paper 2004-01-2572, 2004, https://doi.org/10.4271/2004-01-2572.
Additional Details
Publisher
Published
Jul 19, 2004
Product Code
2004-01-2572
Content Type
Technical Paper
Language
English