SILICON CARBIDE HIGH TEMPERATURE AND HIGH POWER DENSITY INVERTER DESIGN

Silicon carbide (SiC) semiconductor devices have demonstrated promise in increasing power density by offering reduced continuous and switching losses compared to traditional silicon (Si) semiconductors. SiC can also withstand higher temperatures than Si devices. This presents an opportunity to achieve higher power density for vehicle inverters by using SiC. In this work, we describe the design and testing of a prototype SiC three-phase inverter that can achieve higher temperatures and power density than any off-the-shelf offerings, while fitting in a package roughly the size of a shoebox. This will enable future ground vehicle platforms to deliver greater power without needing to increase space claim or vehicle-level cooling compared to traditional Si inverters, enabling greater capabilities for a given platform to support future Warfighter capabilities (such as directed energy weapons, silent mobility, high power radar/communications/jamming on-the-move, and vehicle to grid power). Prior work completed with silicon based switching devices did not package into the combat platform without displacing other equipment or soldiers. Using the SiC space-claim, additional displacement is not required. Therefore, the development of SiC technology into a package for high temperature and high power electronics is critical to enabling the future of electrified vehicles.

Citation: A. Soles, M. Adams, “Silicon Carbide High Temperature and High Power Density Inverter Design”, In Proceedings of the Ground Vehicle Systems Engineering and Technology Symposium (GVSETS), NDIA, Novi, MI, Aug. 13-15, 2019.