Semiconductors Compound Films with Optoeletronic Appliqued

The project has as objective to make the system of epitaxial growth Hot Wall Beam Epitaxy (HWBE) enter in operation for the attainment of composites semiconductors IV-VI family crystalline films, over Barium Fluoride (BaF₂) substrates. The advantage in the use of BaF₂ as substrate is its good marriage of the crystallographic arrangement with the film composites used, that are: Lead Telluride (PbTe) and Lead Telluride with Tin (PbSnTe), chosen because they possess optic properties and mainly the energy of the forbidden band (Eg) narrow. It can thus be used as P-N junctions, which are the infrared detectors that work with the wavelength (λ) range - 5 μm < λ < 14 μm.