Automotive
Technical Paper

Self-Thermal Protecting Power MOSFETs

880411

2/1/1988

Event
SAE International Congress and Exposition
Authors
Masami Yamaoka R&D IC Dept. Nippondenso Co., Ltd.
Yukio Tsuzuki R&D IC Dept. Nippondenso Co., Ltd.
Kazunori Kawamoto R&D IC Dept. Nippondenso Co., Ltd.
Abstract
Content
A power MOSFET which cuts off current surges itself at critical high temperatures and never breaks or fails thermally has been developed. The thermal sensors consist of PN junction diodes built into the polysilicon layers on the oxides of conventional DMOSFETs.
Meta Tags
Topics
Sensors and actuators
Affiliated or Co-Author
R&D IC Dept. Nippondenso Co., Ltd.
Details
DOI
https://doi.org/10.4271/880411
Pages
8
Citation
Yamaoka, M., Tsuzuki, Y., and Kawamoto, K., "Self-Thermal Protecting Power MOSFETs," SAE Technical Paper 880411, 1988, https://doi.org/10.4271/880411.
Additional Details
Publisher
SAE International
Published
2/1/1988
Product Code
880411
Content Type
Technical Paper
Language
English