High Temperature Packaging and Pulse Testing of Parallel SiC Thyristors

2006-01-3106

11/07/2006

Event
Power Systems Conference
Authors Abstract
Content
For fast rise time, high peak current pulse power applications, Silicon Carbide (SiC) is ideal due to its ability to tolerate high localized temperatures generated during switching. Several 4 mm × 4 mm SiC Gate Turn-Off thyristors (GTOs) manufactured by CREE were evaluated. Testing for individual and paired devices was performed under both single and repetitive pulsing using variable pulse duration, ring-down capacitor discharge circuit. At 150 °C, maximum single shot currents as high as 3.2 kA have been shown for single devices at a 50% pulse width of 2 μsec while parallel devices have shown a maximum of 4.4 kA at 150 °C.
Meta TagsDetails
DOI
https://doi.org/10.4271/2006-01-3106
Pages
8
Citation
Geil, B., Bayne, S., and O'Brien, H., "High Temperature Packaging and Pulse Testing of Parallel SiC Thyristors," SAE Technical Paper 2006-01-3106, 2006, https://doi.org/10.4271/2006-01-3106.
Additional Details
Publisher
Published
Nov 7, 2006
Product Code
2006-01-3106
Content Type
Technical Paper
Language
English