841442: Gallium Arsenide Solar Cell Vapor Phase (MOCVD) Technology - Technical Paper

Event: Aerospace Congress and Exposition

Authors

Applied Solar Energy Corp.

Applied Solar Energy Corp.

Abstract

Content: This paper describes progress made in adapting a chemical vapor deposition (CVD) method, using mostly organo-metallic (OM) sources, to deposit layers of gallium arsenide to form an efficient solar cell. The requirements of the layer deposition are discussed, as are the necessary cell process steps required to form a qualified space-use solar cell. The results obtained to date are summarized, along with some consideration.

Meta Tags

Topics: Coating processes
Sun and solar
Chemicals

Affiliated or Co-Author: Applied Solar Energy Corp.

Details

DOI: https://doi.org/10.4271/841442

Citation: Yeh, Y. and Iles, P., "Gallium Arsenide Solar Cell Vapor Phase (MOCVD) Technology," Aerospace Congress and Exposition, Long Beach, California, United States, October 15, 1984, https://doi.org/10.4271/841442.

Additional Details

Publisher: SAE International

Published: 10/1/1984

Product Code: 841442

Content Type: Technical Paper

Language: English