Development of Lateral DMOS Using Process and Device Simulation

980800

2/23/1998

Authors
Abstract
Content
The lateral DMOS (LDMOS) had been developed for intelligent power IC[1][2] for ECU (Electric Control Unit). The process and device simulation methodology are used while developing a devices. The physical model and parameter in analytical model are calibrated to enhance the accuracy of the simulation and to reduce lead time and costs.
Meta TagsDetails
DOI
https://doi.org/10.4271/980800
Pages
6
Citation
Shigematsu, K., Kamiya, T., Nakayama, Y., Higuchi, Y. et al., "Development of Lateral DMOS Using Process and Device Simulation," SAE Technical Paper 980800, 1998, https://doi.org/10.4271/980800.
Additional Details
Publisher
Published
2/23/1998
Product Code
980800
Content Type
Technical Paper
Language
English