Development of Lateral DMOS Using Process and Device Simulation
980800
02/23/1998
- Content
- The lateral DMOS (LDMOS) had been developed for intelligent power IC[1][2] for ECU (Electric Control Unit). The process and device simulation methodology are used while developing a devices. The physical model and parameter in analytical model are calibrated to enhance the accuracy of the simulation and to reduce lead time and costs.
- Pages
- 6
- Citation
- Shigematsu, K., Kamiya, T., Nakayama, Y., Higuchi, Y. et al., "Development of Lateral DMOS Using Process and Device Simulation," SAE Technical Paper 980800, 1998, https://doi.org/10.4271/980800.