Development of an Insulated Gate Bipolar Transistor for the High-power Hybrid System

2007-01-0293

04/16/2007

Event
SAE World Congress & Exhibition
Authors Abstract
Content
The GS450h requires higher system voltage to increase the motor output. For the insulated gate bipolar transistor (IGBT) that serves as the built-in switching device in the intelligent power module (IPM), higher voltage means greater loss and a larger device surface area, and it can also reduce the vehicle's fuel economy performance and increase its cost. To solve these issues, IGBT losses were reduced by (1) using a trench structure to make the IGBT more compact and (2) using a new structure in which the concentration of impurities in the drift layer is optimized. As a result, the device surface area was reduced by 10%, losses were reduced by 14%, and improved vehicle performance was achieved.
Meta TagsDetails
DOI
https://doi.org/10.4271/2007-01-0293
Pages
7
Citation
Togawa, N., Harada, T., Nishiwaki, K., Tagami, R. et al., "Development of an Insulated Gate Bipolar Transistor for the High-power Hybrid System," SAE Technical Paper 2007-01-0293, 2007, https://doi.org/10.4271/2007-01-0293.
Additional Details
Publisher
Published
Apr 16, 2007
Product Code
2007-01-0293
Content Type
Technical Paper
Language
English