Development of Fabrication Technology for MOS-Based Power Switching Devices in SiC

971236

06/18/1997

Event
SAE Aerospace Power Systems Conference
Authors Abstract
Content
Power switching devices in the wide bandgap semiconductor silicon carbide (SiC) are under development in many laboratories in the United States, Europe, and Japan. Because SiC can be thermally oxidized to form SiO2, it is possible to construct MOS-based power devices such as power MOSFETs, IGBTs, and MCTs in this material. This paper outlines the technical challenges which must be overcome before MOS-based power switching devices in SiC can reach the commercial marketplace.
Meta TagsDetails
DOI
https://doi.org/10.4271/971236
Pages
5
Citation
Cooper, J., "Development of Fabrication Technology for MOS-Based Power Switching Devices in SiC," SAE Technical Paper 971236, 1997, https://doi.org/10.4271/971236.
Additional Details
Publisher
Published
Jun 18, 1997
Product Code
971236
Content Type
Technical Paper
Language
English