The automotive industry is witnessing remarkable progress in various facets of vehicle design, encompassing powertrain. To further boost the performance and efficiency of electric vehicles, researchers and designers are venturing beyond conventional silicon-based solutions into cutting-edge technologies. Among these, the application of wide-bandgap materials, specifically silicon carbide (SiC) and gallium nitride (GaN), in power-semiconductor devices for electric vehicles has gained significant popularity. Wide-bandgap-based voltage source converters crafted from SiC and GaN materials demonstrate superior efficiency when compared to their silicon counterparts. However, it is crucial to note that their performance largely hinges on their utilization at high switching frequencies. With the aim of identifying the most suitable technology for future electric vehicle applications, researchers conducted a comprehensive analysis comparing the efficiency of SiC and GaN devices. The investigation encompassed critical factors such as conduction loss, switching loss, breakdown voltage, and thermal comparison. In addition to efficiency considerations, the study also addressed concerns related to electromagnetic interference (EMI) and electromagnetic compatibility (EMC) arising from these wide-bandgap semiconductors. Special attention was given to the EMI/EMC performance of GaN and SiC converters in electric vehicle power systems, covering aspects such as EMI noise. The ultimate objective of the study was to evaluate the efficiency of SiC and GaN, in electric vehicle charger. This evaluation involved a comparative analysis of their fundamental performance parameters and application costs, all with the overarching goal of enhancing efficiency and achieving superior performance for electric vehicles. Moreover, the researchers sought to strike an optimal balance between vehicle performance and cost, enabling the drawing of market-specific conclusions on this pivotal aspect of electric vehicle technology.