A High-Breakdown Voltage n ⁺ -GaAs/δ (p ⁺ )-GaInP/n-GaAs Heterojunction Camel-Gate Transistor for Power System Applications

A high-breakdown-voltage n⁺-GaAs/δ (p⁺)-GaInP/n-GaAs camel-gate field-effect transistor with the triple-step doped-channel has been successfully fabricated and demonstrated. Experimentally, the high gate turn-on voltage of 1.6 V at a gate current of 1 mA/mm and a very high breakdown voltage of 40 V with the low gate leakage current of 400 μA/mm are obtained. The measured transconductance is 145 mS/mm with the current gain cut-off frequency f_T of 17 GHz and the maximum oscillation frequency f_max of 33 GHz for a 1×100 um² device. Consequently, based on the remarkable experimental results, the studied device shows a promise for high-power circuit applications.