A Compact, 100V, 360A Full-Bridge GaN Power Module with Integrated Gate Driver Board

In this paper, the design analysis and development of a 100V, 360A Gallium Nitride (GaN) module is provided. This module has a full-bridge (FB) configuration with four 100V, 90A GaN bare die in parallel per switching position. The design challenges for current distribution on paralleled GaN bare die in a full-bridge module with a small footprint is elaborated with two module designs. To optimize the layout and perform parasitic extraction, Q3D and SIMPLORER tools in ANSYS simulation are utilized.

The selected power module design is fabricated. To validate the design and characterization, static and dynamic tests have been performed on this module. The gate driver design details, and power module loss evaluation techniques are discussed. Moreover, the voltage overshoot and resonance are studied and tested using double pulse test (DPT) setup.