250 °C SiC Power Module Package Design
2008-01-2892
11/11/2008
- Event
- Content
- In order to take full advantage of SiC, a high temperature package for power module using SiC devices was designed, developed, fabricated and tested. The details of the material selection and fabrication process are described. High temperature reliability test and power test shows that the package presented in this paper can perform well at the high junction temperature.
- Pages
- 9
- Citation
- Ning, P., Lai, R., Huff, D., Wang, F. et al., "250 °C SiC Power Module Package Design," SAE Technical Paper 2008-01-2892, 2008, https://doi.org/10.4271/2008-01-2892.