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250 °C SiC Power Module Package Design
ISSN: 0148-7191, e-ISSN: 2688-3627
Published November 11, 2008 by SAE International in United States
Annotation ability available
Event: Power Systems Conference
In order to take full advantage of SiC, a high temperature package for power module using SiC devices was designed, developed, fabricated and tested. The details of the material selection and fabrication process are described. High temperature reliability test and power test shows that the package presented in this paper can perform well at the high junction temperature.
- Puqi Ning - Virginia Polytechnic Institute and State University
- Rixin Lai - Virginia Polytechnic Institute and State University
- Daniel Huff - Virginia Polytechnic Institute and State University
- Fred Wang - Virginia Polytechnic Institute and State University
- Khai D. T. Ngo - Virginia Polytechnic Institute and State University
CitationNing, P., Lai, R., Huff, D., Wang, F. et al., "250 °C SiC Power Module Package Design," SAE Technical Paper 2008-01-2892, 2008, https://doi.org/10.4271/2008-01-2892.
- Rebbereh C. Schierling H. Braun M. “First Inverter using Silicon Carbide Power Switches Only,” Proc. EPE 2003
- Chang H. R. Hanna E. Radun A. V. “Demonstration of Silicon Carbide (SiC) -Based Motor Drive,” Proc. Industrial Electronics Society 2003 IECON ′03. The 29th Annual Conference of the IEEE 2003 1116 1121 2
- Richmond J. Ryu S. Das M. Krishnaswami S. “An Overview of Cree Silicon Carbide Power Devices” 2004 IEEE Workshop on Power Electronics in Transportation Sheraton Detroit Novi October 21-22, 2004
- Hornberger J. Lostetter A. McNutt T. Magan Lal S. Mantooth A. “The Application of Silicon-Carbide (SiC) Semiconductor Power Electronics to Extreme High-Temperature Extraterrestrial Environments,” Proceedings of the 2004 IEEE Aerospace Conference MT March 2004
- Hornberger J. Mounce S. Schupbach R. McPherson B. Mustain H. Mantooth A. Brown W. Lostetter A.B. “High-Temperature Integration of Silicon Carbide (SiC) and Silicon-on-Insulator (SOI) Electronics in Multichip Power Modules (MCPMs),” 11th European Conference on Power Electronics and Applications (EPE2005) Dresden Germany September 2005
- Mounce S. McPherson B. Schupbach R. Lostetter A.B. “Ultra-lightweight, high efficiency SiC based power electronic converters for extreme environments,” Aerospace Conference, 2006 IEEE 4-11 March 2006 1 19
- Cilio E. Hornberger J. McPherson B. Schupbach R. Lostetter A. Garrett J. “A Novel High Density 100kW Three-Phase Silicon Carbide (SIC) Multichip Power Module (MCPM) Inverter,” Proc. APEC ′07 2007 666 672
- Funaki T. Balda J.C. Junghans J. Kashyap A.S. Mantooth H.A. Barlow F. Kimoto T. Hikihara T. “Power Conversion With SiC Devices at Extremely High Ambient Temperatures,” Power Electronics, IEEE Transactions 22 4 July 2007 1321 1329
- Ray B. Kosai H. Scofield J.D. Jordan James B. “200°C Operation of a DC-DC Converter with SiC Power Devices,” APEC 2007 IEEE Feb. 25-Mar. 1 2007 998 1002
- Coppola L. Huff D. Wang F. Burgos R. Boroyevich D. “Survey on High-Temperature Packaging Materials for SiC-Based Power Electronics Modules,” PESC 2007. IEEE June 2007 2234 2240
- Cass C.J. Burgos R. Wang F. Boroyevich D. “Three-Phase Ac Buck Rectifier using Normally-On SiC JFETs at 150 kHz Switching Frequency,” PESC 2007. IEEE June 2007 2162 2167