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Development of an Insulated Gate Bipolar Transistor for the High-power Hybrid System
Technical Paper
2007-01-0293
ISSN: 0148-7191, e-ISSN: 2688-3627
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English
Abstract
The GS450h requires higher system voltage to increase the motor output. For the insulated gate bipolar transistor (IGBT) that serves as the built-in switching device in the intelligent power module (IPM), higher voltage means greater loss and a larger device surface area, and it can also reduce the vehicle's fuel economy performance and increase its cost. To solve these issues, IGBT losses were reduced by (1) using a trench structure to make the IGBT more compact and (2) using a new structure in which the concentration of impurities in the drift layer is optimized. As a result, the device surface area was reduced by 10%, losses were reduced by 14%, and improved vehicle performance was achieved.
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Authors
- Norihiro Togawa - Toyota Motor Corporation
- Tsutomu Harada - Toyota Motor Corporation
- Katsuhiko Nishiwaki - Toyota Motor Corporation
- Ryuzo Tagami - Toyota Motor Corporation
- Tomoyoshi Kushida - Toyota Motor Corporation
- Sachiko Kawaji - Toyota Central R&D Labs, Inc.
- Masayasu Ishiko - Toyota Central R&D Labs, Inc.
Citation
Togawa, N., Harada, T., Nishiwaki, K., Tagami, R. et al., "Development of an Insulated Gate Bipolar Transistor for the High-power Hybrid System," SAE Technical Paper 2007-01-0293, 2007, https://doi.org/10.4271/2007-01-0293.Also In
References
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