X-ray Diffraction (XRD) Characterization Methods for Sigma=3 Twin Defects in Cubic Semiconductor (100) Wafers

NASA’s Langley Research Center has developed a method of using x-ray diffraction (XRD) to detect defects in cubic semiconductor (100) wafers. The technology allows non-destructive evaluation of wafer quality in a simple, fast, inexpensive process that can be easily incorporated into an existing fab line. The invention adds value throughout the semiconductor industry, but is especially relevant in high-end, high-speed electronics where wafer quality has a more significant effect on yields.