Ultrahigh-Vacuum Arc-Jet Source of Nitrogen for Epitaxy

TBMG-1037

12/01/2002

Abstract
Content

An arc-jet source of chemically active nitrogen atoms has been developed for use in molecular-beam epitaxy (MBE) to grow such III-V semiconductors as nitrides of gallium, aluminum, and indium. This apparatus utilizes a confined arc to thermally excite N2 and to dissociate N2 into N atoms. This apparatus is compatible with other, ultrahigh-vacuum MBE equipment commonly used in growing such materials.

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Citation
"Ultrahigh-Vacuum Arc-Jet Source of Nitrogen for Epitaxy," Mobility Engineering, December 1, 2002.
Additional Details
Publisher
Published
Dec 1, 2002
Product Code
TBMG-1037
Content Type
Magazine Article
Language
English