Tin-Based IV-IV Heterostructures Fabricated Using Molecular Beam Epitaxy

The indirect nature of the fundamental energy gap in the elemental semiconductors Si and Ge prevents the use of these materials and their alloys in laser devices. The objective of this work is to fabricate Sn-based IV-IV compounds for finding direct bandgap material. This work focuses on the material system GeSn/Ge, from the growth, characterization, and optical measurement. Experimental evidences on pseudomorphic growth of thick Ge1-xSnx film for Sn composition up to 10% and the direct optical transition are presented.