Threshold Voltage Tuning of Metal-Gate MOSFETs Using an Excimer Laser

This work presents a localized method for tuning the threshold voltages (Vt) of multilayer metal-gate metal-oxide-semiconductor field-effect transistor (MOSFET) devices with a spatial area theoretically limited by the wavelength of the laser beam. This technique allows an independent means to tailor threshold voltage on a device-to-device basis that provides greater design flexibility. This maskless technique allows tailoring of thresholds by tuning the work function of the gate by intermixing titanium and titanium nitride using a laser pulse. The source and drains of the MOSFET are simultaneously annealed by the laser.