Taking Advantage of Parallel Parametric Testing

The production of many electronic devices begins with wafer processing. In addition to complementary metal oxide semiconductor (CMOS) integrated circuits (ICs), this can include such diverse devices as radio frequency (RF) components based on III-V compounds and chemical detectors based on carbon nanotube (CNT) field effect transistors (FETs). In both R&D and production applications, there is a great deal of effort devoted to increasing device test throughput in order to shorten the time to market and reduce costs.