Susceptor-Coating Materials for Growth of 4H-SiC

Several materials have shown promise for coating graphite susceptors used in epitaxial growth of 4H-SiC. The development of appropriate susceptor-coating materials is an essential part of continuing efforts to produce high-quality, thick, undoped and lightly doped epilayers of 4H-SiC for use as semiconductors in future electronic devices that will operate at power levels and temperatures beyond the limits of Si- and GaAs-based devices.