Staggered InGaN Quantum Wells for Improved Active Media for LEDs
TBMG-14347
02/01/2011
- Content
The given technology involves a novel method in achieving high-efficiency group IIInitride light-emitting diodes (LEDs) and laser diodes emitting in the visible regime (wavelengths between 420nm and 650nm) for use in solid-state lighting and medical applications.
- Citation
- "Staggered InGaN Quantum Wells for Improved Active Media for LEDs," Mobility Engineering, February 1, 2011.