Magazine Article

Stable Ohmic Contacts on SiC Devices for High Temperatures

TBMG-7525

12/01/2001

Abstract
Content

Ti3SiC2 has been proposed as a mate- rial for ohmic contacts on SiC-based electronic and microelectromechanical devices intended to operate at temperatures >600 °C and/or in corrosive environments. Although SiC is stable and devices made of SiC are capable of functioning at elevated temperatures and in corrosive environments, the lack of stable ohmic contacts has been a barrier to the realization of SiC-based devices. Most metals react with SiC at high temperatures, forming metal silicides and/or carbides. At a minimum, these reactions cause contact resistances to change over time, affecting the performances of devices; in extreme cases, entire contact layers can deteriorate through oxidation, melting, evaporation, or balling up on surfaces.

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Citation
"Stable Ohmic Contacts on SiC Devices for High Temperatures," Mobility Engineering, December 1, 2001.
Additional Details
Publisher
Published
Dec 1, 2001
Product Code
TBMG-7525
Content Type
Magazine Article
Language
English