Stable Breakdown Obtained in Silicon Carbide Rectifiers
TBMG-32050
8/1/1998
- Content
Experiments have revealed that stable breakdown-voltage characteristics can be achieved in silicon carbide rectifiers. Stable breakdown-voltage characteristics are essential to the ability to withstand overvoltage transients and are therefore necessary for reliability in high-power semiconductor switching and rectifying devices.
- Citation
- "Stable Breakdown Obtained in Silicon Carbide Rectifiers," Mobility Engineering, August 1, 1998.