Magazine Article

Stable Breakdown Obtained in Silicon Carbide Rectifiers

TBMG-32050

8/1/1998

Abstract
Content

Experiments have revealed that stable breakdown-voltage characteristics can be achieved in silicon carbide rectifiers. Stable breakdown-voltage characteristics are essential to the ability to withstand overvoltage transients and are therefore necessary for reliability in high-power semiconductor switching and rectifying devices.

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Citation
"Stable Breakdown Obtained in Silicon Carbide Rectifiers," Mobility Engineering, August 1, 1998.
Additional Details
Publisher
Published
8/1/1998
Product Code
TBMG-32050
Content Type
Magazine Article
Language
English