Silicon Nanowire Growth at Chosen Positions and Orientations

TBMG-5426

07/01/2009

Abstract
Content

It is now possible to grow silicon nanowires at chosen positions and orientations by a method that involves a combination of standard microfabrication processes. Because their positions and orientations can be chosen with unprecedented precision, the nanowires can be utilized as integral parts of individually electronically addressable devices in dense arrays.

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Citation
"Silicon Nanowire Growth at Chosen Positions and Orientations," Mobility Engineering, July 1, 2009.
Additional Details
Publisher
Published
Jul 1, 2009
Product Code
TBMG-5426
Content Type
Magazine Article
Language
English