Silicon Nanowire Growth at Chosen Positions and Orientations
TBMG-5426
07/01/2009
- Content
It is now possible to grow silicon nanowires at chosen positions and orientations by a method that involves a combination of standard microfabrication processes. Because their positions and orientations can be chosen with unprecedented precision, the nanowires can be utilized as integral parts of individually electronically addressable devices in dense arrays.
- Citation
- "Silicon Nanowire Growth at Chosen Positions and Orientations," Mobility Engineering, July 1, 2009.