Magazine Article

Silicon Carbide Junction Field-Effect Transistor Devices for Scalable Solid-State Circuit Breakers

TBMG-7135

02/01/2010

Abstract
Content

Power electronic converters functioning as components in high-power systems, such as those of hybrid military ground vehicles, require fast fault isolation, and in most cases, benefit additionally from bidirectional fault isolation. To prevent converter damage or failure, fault current interrupt speeds in the hundreds of microseconds to few millisecond range are necessary. Presently used mechanical contactors do not provide adequate actuation speeds, and suffer severe degradation during repeated fault isolation. Instead, it is desired to use a large array of semiconductor devices having a collectively low conduction loss to provide large current-handling capability and fast transition speed for current interruption.

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Citation
"Silicon Carbide Junction Field-Effect Transistor Devices for Scalable Solid-State Circuit Breakers," Mobility Engineering, February 1, 2010.
Additional Details
Publisher
Published
Feb 1, 2010
Product Code
TBMG-7135
Content Type
Magazine Article
Language
English