Semiconductor Quantum Dots as Radiation-Hard Light Emitters

Light-emitting devices based on semiconductor quantum dots have been shown to be suitable for use in environments that include high levels of radiation that causes displacement damage in semiconductors - in particular, energetic protons. Conventional light-emitting diodes and other conventional optoelectronic devices become degraded rapidly by such radiation, giving rise to a need for radiation-hard devices. A preliminary confirmation of the feasibility of using semiconductor quantum dots to fill this need has been provided by experimental observations of radiation hardness in InxGa1-xAs/GaAs quantum dots.