Magazine Article

Semiconductor Lasers Containing Quantum Wells in Junctions

TBMG-29228

04/01/2004

Abstract
Content

In a recent improvement upon InxGa1- xAs/InP semiconductor lasers of the bipolar cascade type, quantum wells are added to Esaki tunnel junctions, which are standard parts of such lasers. The energy depths and the geometric locations and thicknesses of the wells are tailored to exploit quantum tunneling such that, as described below, electrical resistances of junctions and concentrations of dopants can be reduced while laser performances can be improved.

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Citation
"Semiconductor Lasers Containing Quantum Wells in Junctions," Mobility Engineering, April 1, 2004.
Additional Details
Publisher
Published
Apr 1, 2004
Product Code
TBMG-29228
Content Type
Magazine Article
Language
English