Relaxed SiGe Films By Surfactant Mediation

Relaxed silicon-germanium (SiGe) has become an important material in the fabrication of high-quality films for various applications. Strain-relaxed SiGe buffers have been produced by at least three known methods. However, these techniques present several disadvantages, such as long growth times, thick buffer layers, rough surfaces, high residual strain degree, and high threading dislocation densities. These problems can result in low yields, increased costs, and poor quality in the devices that are grown on the buffers.