Quantum-Dot Laser for Wavelengths of 1.8 to 2.3 µm

The most closely related prior III-V semiconductor lasers are based, variously, on strained InGaAs quantum wells and InAs quantum dots on InP substrates. The emission wavelengths of these prior devices are limited to about 2.1 µm because of critical quantum-well thickness limitations for these lattice-mismatched material systems.