Magazine Article

Nano-Multiplication-Region Avalanche Photodiodes and Arrays

TBMG-2651

03/01/2008

Abstract
Content

Nano- multiplication- region avalanche photodiodes (NAPDs), and imaging arrays of NAPDs integrated with complementary metal oxide/semiconductor (CMOS) active-pixel-sensor integrated circuitry, are being developed for applications in which there are requirements for high-sensitivity (including photoncounting) detection and imaging at wavelengths from about 250 to 950 nm. With respect to sensitivity and to such other characteristics as speed, geometric array format, radiation hardness, power demand of associated circuitry, size, weight, and robustness, NAPDs and arrays thereof are expected to be superior to prior photodetectors and arrays including CMOS active-pixel sensors (APSs), charge-coupled devices (CCDs), traditional APDs, and microchannelplate/ CCD combinations.

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Citation
"Nano-Multiplication-Region Avalanche Photodiodes and Arrays," Mobility Engineering, March 1, 2008.
Additional Details
Publisher
Published
Mar 1, 2008
Product Code
TBMG-2651
Content Type
Magazine Article
Language
English