Magazine Article

Making AlNx Tunnel Barriers Using a Low-Energy Nitrogen-Ion Beam

TBMG-229

09/01/2005

Abstract
Content

A technique based on accelerating positive nitrogen ions onto an aluminum layer has been demonstrated to be effective in forming thin (<2 nm thick) layers of aluminum nitride (AlNx) for use as tunnel barriers in Nb/Al-AlNx/Nb superconductor/ insulator/ superconductor (SIS) Josephson junctions. AlNx is the present material of choice for tunnel barriers because, to a degree greater than that of any other suitable material, it offers the required combination of low leakage current at high current density and greater thermal stability.

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Citation
"Making AlNx Tunnel Barriers Using a Low-Energy Nitrogen-Ion Beam," Mobility Engineering, September 1, 2005.
Additional Details
Publisher
Published
Sep 1, 2005
Product Code
TBMG-229
Content Type
Magazine Article
Language
English