Lower-Dark-Current, Higher-Blue-Response CMOS Imagers
TBMG-2987
08/01/2008
- Content
Several improved designs for complementary metal oxide/semiconductor (CMOS) integrated- circuit image detectors have been developed, primarily to reduce dark currents (leakage currents) and secondarily to increase responses to blue light and increase signal- handling capacities, relative to those of prior CMOS imagers. The main conclusion that can be drawn from a study of the causes of dark currents in prior CMOS imagers is that dark currents could be reduced by relocating p/n junctions away from Si/SiO2 interfaces. In addition to reflecting this conclusion, the improved designs include several other features to counteract dark-current mechanisms and enhance performance.
- Citation
- "Lower-Dark-Current, Higher-Blue-Response CMOS Imagers," Mobility Engineering, August 1, 2008.