Magazine Article

Low-Power RIE of SiO₂ in CHF₃ To Obtain Steep Sidewalls

TBMG-1149

03/01/2003

Abstract
Content

A reactive-ion etching (RIE) process has been developed to enable the formation of holes with steep sidewalls in a layer of silicon dioxide that covers a silicon substrate. The holes in question are through the thickness of the SiO2 and are used to define silicon substrate areas to be etched or to be built upon through epitaxial deposition of silicon. The sidewalls of these holes are required to be vertical in order to ensure that the sidewalls of the holes to be etched in the substrate or the sidewalls of the epitaxial deposits, respectively, also turn out to be vertical.

Details
Citation
"Low-Power RIE of SiO₂ in CHF₃ To Obtain Steep Sidewalls," Mobility Engineering, March 1, 2003.
Additional Details
Publisher
Published
Mar 1, 2003
Product Code
TBMG-1149
Content Type
Magazine Article
Language
English