Magazine Article

Lattice-Matched Semiconductor Layers on Single Crystalline Sapphire Substrate

TBMG-5877

11/01/2009

Abstract
Content

SiGe is an important semiconductor alloy for high-speed field effect transistors (FETs), high-temperature thermoelectric devices, photovoltaic solar cells, and photon detectors. The growth of SiGe layer is difficult because SiGe alloys have different lattice constants from those of the common Si wafers, which leads to a high density of defects, including dislocations, micro-twins, cracks, and delaminations.

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Citation
"Lattice-Matched Semiconductor Layers on Single Crystalline Sapphire Substrate," Mobility Engineering, November 1, 2009.
Additional Details
Publisher
Published
Nov 1, 2009
Product Code
TBMG-5877
Content Type
Magazine Article
Language
English