Lattice-Matched Semiconductor Layers on Single Crystalline Sapphire Substrate
TBMG-5877
11/01/2009
- Content
SiGe is an important semiconductor alloy for high-speed field effect transistors (FETs), high-temperature thermoelectric devices, photovoltaic solar cells, and photon detectors. The growth of SiGe layer is difficult because SiGe alloys have different lattice constants from those of the common Si wafers, which leads to a high density of defects, including dislocations, micro-twins, cracks, and delaminations.
- Citation
- "Lattice-Matched Semiconductor Layers on Single Crystalline Sapphire Substrate," Mobility Engineering, November 1, 2009.