Ka-Band Front-End Monolithic Microwave Integrated Circuits (MMICs) and Transmit/Receive (T/R) Modules Testing

The US Army Combat Capabilities Development Command Army Research Laboratory (ARL) has been evaluating and designing efficient broadband high-power amplifiers for use in sensors, communications, networking, and electronic warfare (EW). ARL submitted designs of Ka-band low-noise amplifiers (LNAs), power amplifiers (PAs), and transmit/receive (T/R) switches using Qorvo Inc.’s high-performance 0.15-μm gallium nitride (GaN) fabrication process. These amplifiers were fabricated as one- and two-stage designs, as well as integrated T/R modules for bidirectional transceivers as part of a recent ARL Qorvo Prototype Wafer Option (PWO), which yields many different designs from two full 4-inch GaN wafers. This research documents testing and analysis of these designs, as well as lessons learned for improvements to future design efforts.