Ka-Band Front-End Monolithic Microwave Integrated Circuits (MMICs) and Transmit/Receive (T/R) Modules Testing

Gallium nitride monolithic microwave integrated circuit (MMIC) technology has superior performance in power amplifier applications, as well as for low-noise amplifiers with high dynamic range and the ability to survive large, potentially damaging input power levels without the need for additional limiters at the system level.

Army Research Laboratory, Adelphi, Maryland

The US Army Combat Capabilities Development Command Army Research Laboratory (ARL) has been evaluating and designing efficient broadband high-power amplifiers for use in sensors, communications, networking, and electronic warfare (EW). ARL submitted designs of Ka-band low-noise amplifiers (LNAs), power amplifiers (PAs), and transmit/receive (T/R) switches using Qorvo Inc.'s high-performance 0.15-μm gallium nitride (GaN) fabrication process. These amplifiers were fabricated as one- and two-stage designs, as well as integrated T/R modules for bidirectional transceivers as part of a recent ARL Qorvo Prototype Wafer Option (PWO), which yields many different designs from two full 4-inch GaN wafers. This research documents testing and analysis of these designs, as well as lessons learned for improvements to future design efforts.

The key component for a Ka-band transceiver is the LNA, which, when implemented in GaN, has the added advantages of high dynamic range and robust survivability to high-power interference signals. These LNAs were designed with a goal of several gigahertz bandwidth centered around 28 GHz.