InP HEMT MMIC Low-Noise Amplifier for 65 to 110 GHz

A monolithic microwave integrated circuit (MMIC) has been designed to function as a low-power-consumption, low-noise amplifier (LNA) at frequencies from about 65 to about 110 GHz. This MMIC incorporates TRW’s state-of-the-art, InP-based, high-electron-mobility transistors (HEMTs) coupled with coplanar- waveguide (CPW) transmission lines, thin-film resistors, and thin-film capacitors. The MMIC is mounted in a waveguide module with CPW-to-waveguide transitions of the probe type (see figure).