Improving the Efficiency of Green-Blue-Ultraviolet Light-Emitting Diodes

Scientists at the U.S. Naval Research Laboratory (NRL) have suggested a method that could significantly increase the efficiency of green-blue-ultraviolet light-emitting diodes based on GaInN/GaN, AlGaN/GaN, and AlInN/GaN quantum wells. Their approach could enable advances in solid state lighting and the creation of low threshold lasers and high power light emitting diodes (LEDs).