Improved Single-Source Precursors for Solar-Cell Absorbers

Improved single-source precursor compounds have been invented for use in spray chemical vapor deposition (spray CVD) of chalcopyrite semiconductor absorber layers of thin-film solar photovoltaic cells. The semiconductors in question are denoted by the general formula CuInxGa1–xSySe2–y, where x≤1 and y≤2. These semiconductors have been investigated intensively for use in solar cells because they exhibit longterm stability and a high degree of tolerance of radiation, and their bandgaps correlate well with the maximum photon power density in the solar spectrum. In addition, through selection of the proportions of Ga versus In and S versus Se, the bandgap of CuInxGa1–xSySe2–y can be tailored to a value between 1.0 and 2.4 eV, thus making it possible to fabricate cells containing high and/or graded bandgaps.