Magazine Article

Hybrid AlGaN-SiC Avalanche Photodiode for Deep-UV Photon Detection

TBMG-10512

09/01/2010

Abstract
Content

The proposed device is capable of counting ultraviolet (UV) photons, is compatible for inclusion into space instruments, and has applications as deep-UV detectors for calibration systems, curing systems, and crack detection. The device is based on a Separate Absorption and Charge Multiplication (SACM) structure. It is based on aluminum gallium nitride (AlGaN) absorber on a silicon carbide APD (avalanche photodiode). The AlGaN layer absorbs incident UV photons and injects photo-generated carriers into an underlying SiC APD that is operated in Geiger mode and provides current multiplication via avalanche breakdown.

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Citation
"Hybrid AlGaN-SiC Avalanche Photodiode for Deep-UV Photon Detection," Mobility Engineering, September 1, 2010.
Additional Details
Publisher
Published
Sep 1, 2010
Product Code
TBMG-10512
Content Type
Magazine Article
Language
English