Magazine Article

Highly Selective Gas-Phase Etching of Silicon

TBMG-32085

02/01/1998

Abstract
Content

A technique of gentle, highly selective gas-phase etching of silicon has been devised to enable the fabrication of microelectromechanical devices integrated with electronic circuits. For example, newly fabricated complementary metal oxide/semiconductor (CMOS) integrated-circuit chips can be micromachined by use of this technique to incorporate microsensors, without damaging the circuitry already present.

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Citation
"Highly Selective Gas-Phase Etching of Silicon," Mobility Engineering, February 1, 1998.
Additional Details
Publisher
Published
Feb 1, 1998
Product Code
TBMG-32085
Content Type
Magazine Article
Language
English