Highly Selective Gas-Phase Etching of Silicon
TBMG-32085
02/01/1998
- Content
A technique of gentle, highly selective gas-phase etching of silicon has been devised to enable the fabrication of microelectromechanical devices integrated with electronic circuits. For example, newly fabricated complementary metal oxide/semiconductor (CMOS) integrated-circuit chips can be micromachined by use of this technique to incorporate microsensors, without damaging the circuitry already present.
- Citation
- "Highly Selective Gas-Phase Etching of Silicon," Mobility Engineering, February 1, 1998.