High-Temperature Silicon Carbide Power Module for Military Hybrid Electric Vehicles

The ever-increasing electrical power, power density, and cooling requirements of present and future military platforms are pushing silicon-based power electronics systems to their operational limits. To address future needs, wide bandgap semiconductor materials such as silicon carbide (SiC) and gallium nitride (GaN) were developed for electronic applications. Using these semiconductor materials, a new generation of wide bandgap power devices is being developed.