High-Temperature Silicon Carbide Op Amps Fabrication

NASA Glenn has developed a method to correct for variations in transistor threshold voltage due to die location on the wafer for silicon carbide (SiC) op amps, enabling improved electrical circuits for sensor signal conditioning in harsh environments. Important system-level benefits are enabled by improved performance data from sensor circuitry mounted within very hot gas turbine flows or the primary coolant loop of a nuclear reactor, for example.