Heteroepitaxy with Large Lattice Mismatch
TBMG-32037
8/1/1998
- Content
A process for the growth of single-crystal (epitaxial) multilayer films has been developed at the Naval Surface Warfare Center, Dahlgren Division. This process is predicated on the preparation of a compliant interfacial "template" layer of atomic dimensions that can overcome large lattice mismatches. The process can be adopted for the fabrication of integrated electro-optic sensors/receivers, and for new thin-film materials such as the III-nitrides.
- Citation
- "Heteroepitaxy with Large Lattice Mismatch," Mobility Engineering, August 1, 1998.