GaN-Ready Aluminum Nitride Substrates

The objective of this project was to develop and then demonstrate the efficacy of a cost-effective approach for a low-defect-density substrate on which aluminum indium gallium nitride (AlInGaN) light-emitting diodes (LEDs) can be fabricated. The efficacy of this GaN-ready substrate would then be tested by growing high-efficiency, long-lifetime InxGa1-xN blue LEDs.