Gallium Nitride High-Power Electronics

Gallium nitride (GaN) high-power electronic (HPE) devices have the potential to outperform those made from 4H-silicon carbide (SiC), the polytype used for HPE devices, because it has a larger critical electric field, ξC, the field at which the device breaks down – 3.5 versus 2.5 MV/cm. This is due primarily to GaN’s larger energy gap, EG – 3.39 eV versus 3.25 eV. GaN also has a slightly larger electron mobility, μ – 930 versus 900 cm2/V·s.