Forward Voltage Short-Pulse Technique for Measuring High-Power Laser Diode Array Junction Temperature
TBMG-28009
12/01/2017
- Content
NASA’s Langley Research Center has developed a new technology for measuring the junction temperature of laser diode arrays (LDAs) that can support dramatically improved LDA fault analysis and lifetime estimates. This technology provides better spatial and temporal resolution than spectral chirp or thermal imaging methods, and can be integrated into existing LDA systems, such as laser diode drivers, without significant additional costs (including weight, power, and space). Potential applications include quality control and screening of LDAs for maximum lifetime, optimizing development of operational parameters, or providing real-time operational diagnostics/prognostics.
- Citation
- "Forward Voltage Short-Pulse Technique for Measuring High-Power Laser Diode Array Junction Temperature," Mobility Engineering, December 1, 2017.